Ceramic thin film memory device

U.S. Patent Number: 5293335

Abstract: A digital memory circuit for electronic applications. The circuit has at least one memory element connected in series with a load resistor. The digital memory circuit also includes a voltage supply and a data output terminal. The memory element in the digital memory circuit is in the form of a silicon dioxide film derived from a hydrogen silsesquioxane resin. The silicon dioxide film is characterized by a jV curve which includes both resistive and conductive regions for the memory element.

Inventors: Pernisz; Udo C. (Midland, MI), Michael; Keith W. (Midland, MI), Haluska; Loren A. (Midland, MI)

Assignee: Dow Corning Corporation (Midland, MI)

Application Number: 07/988,046

Issued: 1994-03-08

Expired: 2006-03-08

Classes: 365/148 ; 257/2; 257/5; 257/E45.003; 365/163; 365/174

Field of search: 365/148,163,174 257/2,5

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