Method of fabricating a flash memory cell

U.S. Patent Number: 5298447

Abstract: A flash memory cell includes the usual thermal oxide layer deposited above the substrate including the source and the drain. On the thermal oxide layer, a silicon rich oxide layer is formed. Above the silicon rich oxide layer a gate structure is formed of layer of polysilicon separated by an intermediate dielectric layer. The lower polysilicon layer commences as an initial portion of the layer of small grain size followed by either amorphous or large grain size material.

Inventors: Hong; Gary (Hsinchu, TW)

Assignee: United Microelectronics Corporation (Hsinchu, TW)

Application Number: 08/094,744

Issued: 1994-03-29

Expired: 2006-03-29

Classes: 438/264 ; 257/E21.422; 257/E27.103; 257/E29.303; 438/594

Field of search: 437/43,48,52,238 257/321,324

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