Mask ROM process

U.S. Patent Number: 5308777

Abstract: A semiconductor device and a method of manufacturing a semiconductor device includes the steps of forming a first conductivity type layer on one surface of a work piece comprising a semiconductor substrate. A gate oxide is formed on the surface of the substrate. A first conductive structure is formed on the gate oxide consisting essentially of polysilicon. An insulating structure is formed in contact with the first conductive structure. Material is removed from the surface of the first conductive structure to expose at least a portion of the surface of the first layer, and to form on the remaining structure on the workpiece a second conductive structure consisting essentially of polysilicon. The polysilicon is in electrical contact with the first conductive structure. Thus, a compound conductive structure is provided on the work piece.

Inventors: Hong; Gary (Hsinchu, TW)

Assignee: United Microelectronics Corporation (Hsinchu, TW)

Application Number: 08/098,044

Issued: 1994-05-03

Expired: 2006-05-03

Classes: 438/278 ; 257/E21.672; 257/E27.102; 438/290

Field of search: 437/40,41,44,48,52,191,195

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