Semiconductor strain sensor

U.S. Patent Number: 5329271

Abstract: A semiconductor strain sensor includes a silicon substrate, a strain resistive element and electrodes. The silicon substrate has a deformable portion which is deformed when stress is applied to it. The strain resistive element is formed on the deformable portion and has an at least a first layer and a second layer which form a heterojunction between them. The first layer is doped with impurities so that a two-dimensional carrier gas layer is formed in the second layer near the heterojunction. The two-dimensional carrier gas layer has carriers originating from the impurities. The electrodes electrically contact the two dimensional carrier gas layer. Change of resistance of the strain resistive element in accordance with the stress is detected through the electrodes.

Inventors: Inuzuka; Hajime (Nishio, JP), Nakagawa; Tsuyoshi (Gifu, JP), Hara; Kunihiko (Nukata, JP)

Assignee: Nippondenso Co., Ltd. (Kariya, JP)

Application Number: 07/878,429

Issued: 1994-07-12

Expired: 2006-07-12

Classes: 338/4 ; 338/36; 338/42; 338/5

Field of search: 338/4,2,5,36,42 361/283 73/718,720,721

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