Ultra-high-speed photoconductive devices using semi-insulating layers

U.S. Patent Number: 5332918

Abstract: An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.

Inventors: Smith; Frank W. (Cambridge, MA), Hollis; Mark A. (Concord, MA), Calawa; Arthur R. (Wellesley, MA), Diadiuk; Vicky (Lincoln, MA), Le; Han Q. (Newton, MA)

Assignee: Massachusetts Institute of Technology (Cambridge, MA)

Application Number: 07/938,385

Issued: 1994-07-26

Expired: 2006-07-26

Classes: 257/431 ; 257/184; 257/432; 257/439; 257/459; 257/536; 257/537; 257/664; 257/775; 257/E21.126; 257/E21.407; 257/E21.449; 257/E21.452; 257/E21.697; 257/E29.061; 257/E29.162; 257/E29.321; 257/E31.093; 338/15

Field of search: 257/431,432,536,537,459,10,21,53,80,184,439,440,449,473,664 338/15

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