Production of high specific activity silicon-32

U.S. Patent Number: 5346678

Abstract: A process for preparation of silicon-32 is provide and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

Inventors: Phillips; Dennis R. (Los Alamos, NM), Brzezinski; Mark A. (Santa Barbara, CA)

Assignee: The United States of America as represented by the United States (Washington, DC)

Application Number: 07/950,552

Issued: 1994-09-13

Expired: 2006-09-13

Classes: 423/2 ; 376/192; 376/195; 423/249; 423/325; 423/335; 423/339

Field of search: 423/2,325,335,339,249 376/192,195

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