Formation of ruthenium oxide for integrated circuits

U.S. Patent Number: 5358889

Abstract: A method is provided for forming a conductive layer of ruthenium oxide layer RuO.sub.2. The RuO.sub.2 layer is formed from a coating of a precursor solution comprising a ruthenium (III) nitrosyl salt,subsequent heat treatment, and annealing at low temperature. The resulting layer of a tetragonal phase of crystalline ruthenium oxide is suitable for formation thereon of a perovskite structure ferroelectric material for applications in ferroelectric non-volatile memory cells. The chloride free process is compatible with processing for submicron device structures for bipolar, CMOS or bipolar CMOS integrated circuits.

Inventors: Emesh; Ismail T. (Cumberland, CA), McDonald; David R. (Ottawa, CA)

Assignee: Northern Telecom Limited (Montreal, CA)

Application Number: 08/053,755

Issued: 1994-10-25

Expired: 2006-10-25

Classes: 438/3 ; 257/E21.011; 438/608

Field of search: 428/209 427/96 437/196,187,201,47,60,919 257/532 361/321

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