Process for synthesizing diamond in a vapor phase

U.S. Patent Number: 5380516

Abstract: The present invention relates to a method for synthesizing diamond by chemical vapor deposition (CVD) process, and specifically a chemical deposition process which allows production of diamond of high purity and high crystallizability having various uses at low cost and at high speed. In the first method for the present invention, a mixture of oxygen gas and a carbon-containing compound gas and optionally an inert gas is introduced into a reaction vessel and a plasma is generated by use of an electromagnetic field, thereby producing diamond on a substrate placed in the vessel. In the second method of the present invention, a mixture containing at least one of fluorine gas, chlorine gas, a nitrogen oxide gas and sulfur dioxide gas, or a mixture of the gas mixture with oxygen gas and a carbon-containing compound gas, or a mixture thereof with an inert gas is introduced into a reaction vessel, and a plasma is generated by use of an electromagnetic field, thereby producing diamond on a base material placed in the vessel.

Inventors: Tanabe; Keiichiro (Itami, JP), Imai; Takahiro (Itami, JP), Fujimori; Naoji (Itami, JP)

Assignee: Sumitomo Electric Industries, Ltd. (JP)

Application Number: 07/931,494

Issued: 1995-01-10

Expired: 2007-01-10

Classes: 423/446 ; 427/249.8

Field of search: 423/446 156/DIG.68 427/249,255.1

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