Fabrication method of fine structures

U.S. Patent Number: 5381753

Abstract: A fabrication method provides fine structures which have few carrier trap centers and light absorption levels and find applications in quantum wires and quantum boxes having arbitrary configurations at least within a two-dimensional plane. The fabrication method comprises the steps of having a sharp tip held in close proximity to the surface of a substrate 1 and having a metal constituting the tip evaporated from the top. Alternatively, a metal contained in ambient vapor or a solution decomposed by a tunnel current or the like is provided. The metal is deposited locally on the substrate surface. A finely structured crystal is grown on the locally deposited region by a vapor phase-liquid phase-solid phase reaction.

Inventors: Okajima; Michio (Neyagawa, JP), Kusumoto; Osamu (Sakai, JP), Tohda; Takao (Ikoma, JP), Yokoyama; Kazuo (Hirakata, JP), Shibata; Motoshi (Hirakata, JP)

Assignee: Matsushita Electric Industrial Co., Ltd. (Kadoma, JP)

Application Number: 08/055,728

Issued: 1995-01-17

Expired: 2007-01-17

Classes: 117/12 ; 117/921; 117/931; 117/935; 117/938

Field of search: 136/600,609,DIG.64,DIG.101,DIG.112 117/12,931,935,921,938

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