Process for simultaneous removal of photoresist and polysilicon/polycide etch residues from an integrated circuit structure

U.S. Patent Number: 5382316

Abstract: A plasma etch process is described for simultaneously removing photoresist and etch residues, such as silicon oxide residues, remaining on a substrate from a prior polysilicon and/or polycide etch. The process comprises: (a) generating radicals in a plasma generator upstream of an etch chamber, from an etch gas mixture comprising (i) oxygen, water vapor, or a mixture of same; and (ii) one or more fluorine-containing etchant gases; and (b) then contacting the substrate containing the photoresist and residues from the previous polysilicon/polycide etch with the generated radicals in the etch chamber to remove both the photoresist and the etch residues during the same etch step.

Inventors: Hills; Graham W. (Los Gatos, CA), Bucknall; Ruth E. (Mountain View, CA)

Assignee: Applied Materials, Inc. (Santa Clara, CA)

Application Number: 08/145,357

Issued: 1995-01-17

Expired: 2007-01-17

Classes: 216/67 ; 134/1; 134/2; 216/48; 216/60; 257/E21.256

Field of search: 156/643,646,651,657,668 134/1,2,31

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