Manufacturing method of a semiconductor device utilizing thin metal film

U.S. Patent Number: 5382544

Abstract: A semiconductor device is manufactured using the electron beam exposure method. A resist is applied on an interlayer dielectric film through a thin metal film, and a contact hole is formed in the interlayer dielectric film. The thin metal film is utilized as a part of a second metal wiring pattern after removing its surface oxides.

Inventors: Matsumoto; Michikazu (Kyoto, JP), Hashimoto; Kazuhiko (Moriguchi, JP)

Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP)

Application Number: 08/066,882

Issued: 1995-01-17

Expired: 2007-01-17

Classes: 438/623 ; 148/DIG.105; 148/DIG.17; 257/E21.577; 257/E21.582; 438/671; 438/702; 438/780; 438/910; 438/945; 438/949; 438/950

Field of search: 437/195,228,229,928 148/DIG.105,DIG.17 156/644,659.1 430/296

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