Semiconductor device having MOS source follower circuit

U.S. Patent Number: 5382819

Abstract: A semiconductor device having a source follower circuit is configurated in such a way that a first and a second p-type wells are formed by diffusing a p-type impurity into an n-type semiconductor substrate doped with an n-type impurity of a low density. Next, on the first well, a driver transistor of the source follower circuit and then, on the second well, a load transistor of the source follower circuit are formed. The first well and a source of the driver transistor are then connected to each other.

Inventors: Honjo; Atsushi (Tokyo, JP)

Assignee: Kabushiki Kaisha Toshiba (Kanagawa, JP)

Application Number: 07/974,471

Issued: 1995-01-17

Expired: 2007-01-17

Classes: 257/371 ; 257/373; 257/392; 257/393; 257/E27.061

Field of search: 257/392,393,371,373

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