Semiconductor laser and a method for producing the same

U.S. Patent Number: 5383214

Abstract: A semiconductor laser including a semiconductor substrate and a multilayer structure formed upon the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers between which the active layer is interposed, and a current confinement layer for injecting a current into a stripe-shaped predetermined region of the active layer. The current confinement layer comprises a first current blocking layer formed in regions thereof excluding a region corresponding to the predetermined region of the active layer. The first current blocking layer has a refractive index higher than a refractive index of the pair of cladding layers and an energy band gap larger than an energy band gap of the active layer.

Inventors: Kidoguchi; Isao (Mino, JP), Kamiyama; Satoshi (Sanda, JP), Ohnaka; Kiyoshi (Moriguchi, JP)

Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP)

Application Number: 08/092,358

Issued: 1995-01-17

Expired: 2007-01-17

Classes: 372/46.014 ; 372/45.01; 438/40

Field of search: 372/45,46 437/129

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