Method of manufacturing a semiconductor device comprising a silicon body in which semiconductor regions are formed by ion implantations

U.S. Patent Number: 5384279

Abstract: A method of manufacturing a semiconductor device is set forth, comprising a silicon body (1) having a surface (4) where there are situated a number of semiconductor regions (5, 6) and field oxide regions (7). The semiconductor regions is formed, after the field oxide regions have been provided, by implantations of n-type and p-type dopants. In accordance with the invention the implantations with the n-type dopant (10, 11, 14), which are performed using an implantation mask (8) provided on the surface and comprising openings (9) at the area of a part of the semiconductor regions (5) to be formed, are combined with the implantations with the p-type dopant (12, 13, 15) which are carried out without using the implantation mask. Thus, the semiconductor regions (5, 6) are realised by means of a single implantation mask (8).

Inventors: Stolmeijer; Andre (Eindhoven, NL), Van Attekum; Paulus M. T. M. (Eindhoven, NL), Den Blanken; Hubertus (Eindhoven, NL), Van Der Plas; Paulus A. (Eindhoven, NL), De Werdt; Reinier (Eindhoven, NL)

Assignee: U.S. Philips Corporation (New York, NY)

Application Number: 08/144,091

Issued: 1995-01-24

Expired: 2007-01-24

Classes: 438/217 ; 257/E21.337; 257/E21.633; 257/E27.067; 438/228; 438/450; 438/451; 438/919

Field of search: 437/26,27,28,34,45,57

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