Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

U.S. Patent Number: 5386128

Abstract: A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Inventors: Fossum; Eric R. (La Crescenta, CA), Cunningham; Thomas J. (Pasadena, CA), Krabach; Timothy N. (Valencia, CA), Staller; Craig O. (Tujunga, CA)

Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration (Washington, DC)

Application Number: 08/186,185

Issued: 1995-01-31

Expired: 2007-01-31

Classes: 257/183.1 ; 257/187; 257/189; 257/233; 257/239; 257/258; 257/279; 257/E27.154; 257/E27.16; 257/E29.228

Field of search: 257/183.1,184,187,189,231,232,233,234,239,257,258,279,291,292

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