Wafer etch protection method

U.S. Patent Number: 5387316

Abstract: A method of etching a semiconductor wafer includes providing a wafer having a portion thereof to be etched. A highly doped region is formed in the periphery of the wafer which is subsequently etched. The highly doped region of the wafer is substantially etch resistant to an etchant relative to the portion of the wafer being etched.

Inventors: Pennell; Ronald C. (Chandler, AZ), Baskett; Ira E. (Tempe, AZ), Ford; Lynn W. (Scottsdale, AZ)

Assignee: Motorola, Inc. (Schaumburg, IL)

Application Number: 07/987,848

Issued: 1995-02-07

Expired: 2007-02-07

Classes: 438/53 ; 257/E21.223; 438/381; 438/753

Field of search: 156/648,649,647,662,659.1

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