Laser CVD method for synthesizing diamond

U.S. Patent Number: 5387443

Abstract: A method for synthesizing a diamond by vapor deposition permits selectively growing high quality diamond on any desired region of a base material at a lower temperature compared to respective conventional temperatures starting with a raw material gas which is prepared by diluting a compound containing carbon atoms such as methane with hydrogen gas. This diluted raw material gas is irradiated with a laser beam satisfying at least one of the following two conditions, namely a spread angle of 1.times.10.sup.-1 mrad to 5.times.10.sup.-1 mrad during oscillation or a half-power band width of 1.times.10.sup.-4 nm to 1.times.10.sup.-1 nm with respect to a band width of an oscillation having a wavelength of 190 nm to 360 nm. Diamond is deposited on the base material from a chemical species generated by such irradiation.

Inventors: Ota; Nobuhiro (Hyogo, JP), Fujimori; Naoji (Hyogo, JP), Watanabe; Kenichi (Hyogo, JP)

Assignee: Sumitomo Electric Industries, Ltd. (Osaka, JP)

Application Number: 08/090,282

Issued: 1995-02-07

Expired: 2007-02-07

Classes: 427/586 ; 423/446; 427/255.5; 427/596

Field of search: 427/590,596,586,249,122,255.5 428/408 156/DIG.68 423/446

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