Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub. 2

U.S. Patent Number: 5387556

Abstract: A process for etching aluminum from a substrate, where portions of the aluminum are protected by a resist material, is described. The substrate is placed into a chamber and a process gas comprising HCl, Cl-containing etchant and N.sub.2 is introduced in the chamber. A plasma is generated in the chamber to generate from the process gas an etch gas that etches aluminum from the substrate at fast rates, with good selectivity, reduced profile microloading, and substantially only anisotropic etching.

Inventors: Xiaobing; Diana M. (San Jose, CA), Rhoades; Charles S. (Los Gatos, CA)

Assignee: Applied Materials, Inc. (Santa Clara, CA)

Application Number: 08/021,831

Issued: 1995-02-07

Expired: 2007-02-07

Classes: 438/695 ; 216/67; 216/77; 257/E21.311; 438/720

Field of search: 437/228 156/643,646,665

Click the image above to view patent images at uspto.gov within a frame.

Click here for the fulltext page on uspto.gov within a frame.