Process of making chalcopyrite structure semiconductor film

U.S. Patent Number: 5389572

Abstract: A I-III-VI.sub.2 chalcopyrite semiconductor film containing a Group VII element as a dopant, and methods to produce such a chalcopyrite film are provided. The chalcopyrite film of the present invention has stoichiometric composition, and electrical characteristics such as p-n conduction type, carrier concentration and the like are controlled.

Inventors: Negami; Takayuki (Katano, JP), Nishitani; Mikihiko (Nara, JP), Kohiki; Shigemi (Osaka, JP), Wada; Takahiro (Katano, JP)

Assignee: Matsushita Electric Industrial Co., Ltd. (Osaka, JP)

Application Number: 08/195,948

Issued: 1995-02-14

Expired: 2007-02-14

Classes: 438/479 ; 136/264; 136/265; 148/DIG.153; 257/E31.027; 438/509; 438/930; 438/95

Field of search: 136/264 427/5,105,107,141,174 148/DIG.53

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