Self-aligned contact diffusion barrier method

U.S. Patent Number: 5389575

Abstract: A method of forming a contact diffusion barrier in a thin geometry integrated circuit device involves implanting a second material into a low resistivity material that overlies the semiconductor to which contact is desired. The low resistivity and implanted materials are selected to intereact with each other and form a contact diffusion barrier. Both materials may include transition metals, in which case the diffusion barrier is a composite transition metal. Alternately, the low resistivity material may include a transition metal, while implantation is performed with nitrogen. The implantation is performed by plasma etching, preferably with active cooling, which can be combined in a continuous step with the etching of the contact opening. The resulting contact diffusion barrier is self-aligned with the contact opening, and is established only in the immediate vicinity of the opening.

Inventors: Chin; Maw-Rong (Huntington Beach, CA), Warren; Gary (Huntington Beach, CA), Liao; Kuan-Yang (Laguna Niguel, CA)

Assignee: Hughes Aircraft Company (Los Angeles, CA)

Application Number: 08/039,718

Issued: 1995-02-14

Expired: 2007-02-14

Classes: 438/653 ; 257/E21.168; 438/659; 438/913

Field of search: 437/195,190,200,235

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