Insulated gate bipolar transistor having high short-circuit and latch-up withstandability

U.S. Patent Number: 5391898

Abstract: An IGBT has an emitter bypass structure. The interval D between N emitter regions is adapted to be larger than two times of a channel length L in order to effectively decrease a channel width to effectively decrease a saturation current. A high concentration region may be provided in a P base region, which is closer to the end portion of the P base region than the emitter regions between the emitter regions, so that the channel width can be effectively decreased even without the relation of D>2L. A channel width per unit area W.sub.U may be in a range of 140 cm.sup.-1 .ltoreq.W.sub.U .ltoreq.280 cm.sup.-1 in an IGBT of a breakdown voltage class of 500-750 V or 70 cm.sup.-1 .ltoreq.W.sub.U .ltoreq.150 cm.sup.-1 in an IGBT of a breakdown voltage class of 1000-1500 V, so that an IGBT having a short-circuit withstandability and a latch-up withstandability suitable for an inverter can be implemented.

Inventors: Hagino; Hiroyasu (Itami, JP)

Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP)

Application Number: 07/926,378

Issued: 1995-02-21

Expired: 2007-02-21

Classes: 257/139 ; 257/138; 257/142; 257/212; 257/378; 257/E29.027; 257/E29.198

Field of search: 257/107,138,139,142,143,212,337,341,378

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