Constant current generating circuit for semiconductor devices

U.S. Patent Number: 5391979

Abstract: The constant current generating circuit includes a high resistance element for generating a very small current. This very small current is supplied to a first MOS transistor having a sufficiently large gate width to gate length ratio. The gate-source voltage of the first MOS transistor becomes its threshold voltage VTH, and the voltage applied across a resistance connected between the gate of the first MOS transistor and the ground line is set to a constant value VTH. Thus, a constant current is normally passed through the resistance. Since the very small current is supplied from the high resistance element which is normally turned on, regardless of the change of the power supply voltage, a constant current can be generated stably.

Inventors: Kajimoto; Takeshi (Hyogo, JP), Miyamoto; Takayuki (Hyogo, JP)

Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP)

Application Number: 08/135,512

Issued: 1995-02-21

Expired: 2007-02-21

Classes: 323/313 ; 323/315; 327/543

Field of search: 323/312,313,314,311,315 307/296.1,296.6

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