Method for forming a patterned layer by selective chemical vapor deposition

U.S. Patent Number: 5393577

Abstract: In a method for forming a patterned layer by the selective CVD, the material gas for forming a patterned layer is introduced into a CVD chamber in which a semiconductor substrate is set, and then the CVD process is carried out at a predetermined temperature of the substrate while a light having a predetermined wavelength is irradiated selectively through a mask having a predetermined pattern on the substrate. The CVD layer grows on the area of the surface of the substrate where the light is not irradiated, however, the CVD growth is hindered on the area where the light is irradiated, by the presence of a thin layer which prevent the CVD growth, for example.

Inventors: Uesugi; Fumihiko (Tokyo, JP), Kishida; Shunji (Tokyo, JP)

Assignee: NEC Corporation (Tokyo, JP)

Application Number: 07/717,603

Issued: 1995-02-28

Expired: 2007-02-28

Classes: 438/660 ; 216/41; 216/66; 427/252; 427/282; 427/287; 427/314; 427/586; 427/96.8; 430/298; 430/314; 438/676; 438/681

Field of search: 427/282,287,252,99,56.1,314,586,585 156/643

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