Charge pump circuit having an improved charge pumping efficiency

U.S. Patent Number: 5394365

Abstract: A charge pump circuit includes a P channel field effect transistor, a diode-connected N channel field effect transistor between a first node and a second node. The P channel field effect transistor operates in response to a first clock signal applied through a first capacitor to discharge the first node to a ground potential. The first node receives a second clock signal through a second capacitor. Negative electric charges are pumped out to the second node. A negative bias voltage is generated from the second node with an improved efficiency and reliability.

Inventors: Tsukikawa; Yasuhiko (Hyogo, JP)

Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP)

Application Number: 08/045,069

Issued: 1995-02-28

Expired: 2007-02-28

Classes: 365/189.09 ; 327/534; 327/536; 365/177; 365/204

Field of search: 365/189.09,204,177 307/578,607,264,482,296.2

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