Read-only-memory process with self-aligned coding

U.S. Patent Number: 5665621

Abstract: A process of fabricating a read-only-memory using a self-aligned technique for coding. By forming cap layers on word lines and forming stoppers between the stacked word lines/cap layers, sufficient tolerance for coding mask misalignment can be provided to ensure the alignment of coding even when misalignment happens. Therefore the problem of partially turned-off adjacent memory cells is eliminated.

Inventors: Hong; Gary (Hsinchu, TW)

Assignee: United Microelectronics Corporation (Taipei, TW)

Application Number: 08/577,031

Issued: 1997-09-09

Expired: 2005-09-09

Classes: 438/278 ; 257/E21.672

Field of search: 437/48,52,60,45,43,235,238 438/48

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