Method and apparatus for performing chemical vapor deposition

U.S. Patent Number: 5691236

Abstract: An apparatus and method for performing a chemical vapor deposition (CVD) procedure to deposit an insulating layer when fabricating semiconductor integrated circuit devices over a silicon wafer. The CVD apparatus includes a buffer chamber for temporarily holding the wafer, and a chemical vapor deposition reaction chamber arranged at the periphery of the buffer chamber and communicating with the buffer chamber via a first access door. The CVD apparatus additionally includes a heating chamber, also arranged at the periphery of the buffer chamber, and communicating with the buffer chamber via a second access door, for performing a heating treatment of the wafer before the insulating layer is deposited on the wafer in the CVD reaction chamber. A transport arm is provided for transporting the wafer into and out of the heating chamber and the chemical vapor deposition reaction chamber.

Inventors: Chu; Hsin-Kun (Hsinchu Hsien, TW)

Assignee: United Microelectronics Corporation (TW)

Application Number: 08/706,699

Issued: 1997-11-25

Expired: 2005-11-25

Classes: 438/631 ; 257/E21.243; 427/255.26; 438/778; 438/787

Field of search: 437/194,228,235,238,248 417/314,255.3,255.2 118/719

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