Silicon-rich tunnel oxide formed by oxygen implantation for flash EEPROM

U.S. Patent Number: 5726070

Abstract: A process for forming an EEPROM having silicon rich tunnel oxide is disclosed. This oxide is used in the formation of flash EEPROMs and results in high tunneling current at low voltages. The oxide also results in EEPROMs having good endurance. A layer of silicon enriched with oxygen is formed between the substrate and the insulating layer separating the substrate from the floating gate.

Inventors: Hong; Gary (Hsin-Chu, TW), Hsu; Ching-Hsiang (Hsin-Chu, TW)

Assignee: United Microelectronics Corporation (Hsin-Chu, TW)

Application Number: 08/622,692

Issued: 1998-03-10

Expired: 2006-03-10

Classes: 438/264 ; 257/E21.193; 257/E21.422; 257/E29.303; 438/594; 438/770

Field of search: 437/24,25,43,238,239,978

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