Semiconductor device having a minute contact hole

U.S. Patent Number: 5726499

Abstract: A contact structure includes a depression formed in an insulation layer covered by an etching resistant layer and a through hole provided in the depression, wherein a ring-shaped wall member is provided on the depression such that the space formed inside the ring-shaped wall member continues to the through hole. The ring-shaped wall member is formed of a material having an etching rate different from the material forming insulation layer or the etching resistant layer.

Inventors: Irinoda; Mitsugu (Kakogawa, JP)

Assignee: Ricoh Company, Ltd. (Tokyo, JP)

Application Number: 08/681,221

Issued: 1998-03-10

Expired: 2006-03-10

Classes: 257/774 ; 257/758; 257/776; 257/E21.577; 257/E21.584; 257/E23.019

Field of search: 257/774,776,773,758

Click the image above to view patent images at uspto.gov within a frame.

Click here for the fulltext page on uspto.gov within a frame.