Low temperature method of manufacturing epitaxial titanium silicide

U.S. Patent Number: 5731226

Abstract: A method of manufacturing epitaxial titanium silicide in a metal silicide processing has a lower than usual processing temperature requirement, and is therefore suitable for use in the manufacturing of integrated circuits. The epitaxial titanium silicide so formed is made without a grain boundary and is thus capable of lowering the electrical resistance of the titanium silicide. First, a silicon substrate with an exposed crystalline silicon layer on the surface is provided. Then a titanium layer and a titanium nitride layer are sequentially formed. Finally, using a rapid thermal processing, an epitaxial titanium silicide layer is formed.

Inventors: Lin; Jiunn Hsien (Yungkang, TW), Chen; Shuh-Ren (Hsinchu, TW)

Assignee: United Microelectronics Corporation (Taipei, TW)

Application Number: 08/740,692

Issued: 1998-03-24

Expired: 2006-03-24

Classes: 438/607 ; 257/E21.165; 438/683; 438/902

Field of search: 437/415M,190,192,200

Click the image above to view patent images at uspto.gov within a frame.

Click here for the fulltext page on uspto.gov within a frame.