Process for producing semiconductor substrate by heating to flatten an unpolished surface

U.S. Patent Number: 5869387

Abstract: A process for producing a semiconductor substrate comprises heat-treating a substrate having a monocrystal thereon in a reducing atmosphere.

Inventors: Sato; Nobuhiko (Yokohama, JP), Yonehara; Takao (Atsugi, JP), Sakaguchi; Kiyofumi (Atsugi, JP)

Assignee: Canon Kabushiki Kaisha (Tokyo, JP)

Application Number: 08/402,975

Issued: 1999-02-09

Expired: 2007-02-09

Classes: 438/459 ; 257/E21.219; 257/E21.243; 257/E21.567; 257/E21.569; 257/E21.57; 438/479

Field of search: 437/62,71,83,84,86,925,966,974,937,946 156/630 148/DIG.12,DIG.135,DIG.150 438/149,406,459,479

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