Process for preparing a functional thin film by way of the chemical reaction among active species

U.S. Patent Number: 5874350

Abstract: A method for forming a functional silicon- or germanium-containing amorphous deposited film on a substrate which comprises a film-forming chamber having a film-forming space, a substrate holder and an electric heater for positioning the substrate in the film-forming chamber, an exhaust pipe in fluid communication with the film-forming chamber, a first gas-introducing portion for providing an active species (H), having an activation space for generating the active species (H), a microwave discharge supply source and a passage for providing a gaseous hydrogen-containing material into the activation space in order to produce the active species (H), a second gas-introducing portion for providing a gaseous silicon- or germanium-containing material (X), capable of reacting with the active species (H) to form a reaction product (HX) that is capable of forming the functional deposited film on the substrate, and a transportation path having a mixing space and a second microwave discharge energy supply source for promoting reaction with the active species.

Inventors: Nakagawa; Katsumi (Nagahama, JP)

Assignee: Canon Kabushiki Kaisha (Tokyo, JP)

Application Number: 08/322,410

Issued: 1999-02-23

Expired: 2007-02-23

Classes: 438/485 ; 427/562; 427/563; 427/578; 438/584; 438/758

Field of search: 437/113,101 427/561,562,563,568,578,485,482,584,758 148/161

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