Method for producing self-polarized ferro-electric layers, especially PZT layers, with a rhombohedral crystal structure

U.S. Patent Number: 6440210

Abstract: A method for producing self-polarized ferroelectric layers, in particular PZT layers, with a rhombohedral crystal structure includes providing a substrate and heating it to a temperature T1. Afterward the layer with a rhombohedral crystal structure is applied to the substrate by means of a sputtering method. This layer includes a Zr-deficient layer with a Curie temperature TC1 and a Zr-abundant layer with a Curie temperature TC2 wherein TC2

Inventors: Bruchhaus; Rainer (Munchen, DE), Pitzer; Dana (Unterschleissheim, DE), Primig; Robert (Munchen, DE), Schreiter; Matthias (Munchen, DE)

Assignee: Siemens Aktiengesellschaft (Munich, DE)

Application Number: 09/787,378

Issued: 2002-08-27

Expired: 2006-08-27

Classes: 117/4 ; 117/88; 117/9; 117/948; 117/949; 257/E21.01; 257/E21.272; 428/446; 428/469; 428/701

Field of search: 117/948,949,7,9,88 428/445,469,701,702

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