Memory module having a two-transistor memory cell

U.S. Patent Number: 6466474

Abstract: A memory module stores digital data. The memory module has many memory cells biased by a voltage source. Each memory cell has an access transistor electrically connected to a word line and a bit line for receiving bits from the bit line when the word line turns on the access transistor, a switching circuit electrically connected to the access transistor, and a capacitor electrically connected to the switching circuit. The switching circuit turns on or off according to the bit from the access transistor. The capacitor stores charge supplied by the switching circuit when the switching circuit turns on. The capacitor stores charge supplied by the voltage source when the switching circuit turns off. When the access transistor turns off, the switching circuit or the voltage source provides charge to the capacitor to sustain the voltage level of the capacitor to compensate for charge leakage of the capacitor.

Inventors: Liu; Chih-Cheng (Pan-Chiao, TW), Wu; De-Yuan (Hsin-Chu, TW)

Assignee: United Microelectronics Corp. (Hsin-Chu, TW)

Application Number: 09/682,399

Issued: 2002-10-15

Expired: 2006-10-15

Classes: 365/149 ; 365/187

Field of search: 365/149,187,188

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