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Anti-reflection structure for a conductive layer in a semiconductor device
U.S. Patent Number: 6525353
Abstract: An anti-reflection structure formed on a gate electrode in a MOSFET device includes a first and second anti-reflection layers sandwiching therebetween a silicon nitride layer. Each of the anti-reflection layers has a two-layer structure including a silicon oxide nitride film and a protective silicon oxide film. The anti-reflection layer structure improves the accuracy of the pattern size for the gate electrode.
Inventors: Iwasaki; Haruo (Tokyo, JP)
Assignee: NEC Corporation (Tokyo, JP)
Application Number: 09/689,881
Issued: 2003-02-25
Expired: 2007-02-25
Classes: 257/288 ; 257/E21.029; 257/E21.039; 257/E21.206; 257/E21.268; 257/E21.314; 257/E21.507; 257/E21.654; 438/636; 438/952
Field of search: 257/288 438/636,952
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