Magnetic device

U.S. Patent Number: 6525532

Abstract: A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magneto-resistive element having a first magnetic layer of a soft magnetic material formed on a flat substrate, first and second tunnel barrier layers formed on the first magnetic layer, magnetic particles of a ferromagnetic material provided between the first and second tunnel barrier layers, and a second magnetic layer of a soft magnetic material formed on the second tunnel barrier layer so as to create tunneling junctions.

Inventors: Sato; Toshihiko (Kawaguchi, JP), Nakatani; Ryoichi (Urawa, JP), Inaba; Nobuyuki (Hasuda, JP)

Assignee: Hitachi, Ltd. (Tokyo, JP)

Application Number: 10/020,403

Issued: 2003-02-25

Expired: 2007-02-25

Classes: 324/252 ; 257/E43.004; 428/811.1

Field of search: 324/252,235,207.21 257/128,421 338/32R 428/692 360/324.2

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