Ferroelectric capacitor memory

U.S. Patent Number: 6525956

Abstract: Data can be read from a ferroelectric memory cell with stability in the event of deterioration on a ferroelectric constituting the memory cell. A pair of precharge transistors precharges a selected bit line BL/XBL to a second potential VDD. After a while, a word line selector activates a word line WL, a current mirror amplifier amplifies a difference in current, which is applied to the pair of precharge transistors, to a sub bit line SBL/XSBL, and data is read from the ferroelectric memory cell.

Inventors: Murakuki; Yasuo (Kyotanabe, JP)

Assignee: Matsushita Electric Industrial Co., Ltd. (JP)

Application Number: 09/905,111

Issued: 2003-02-25

Expired: 2007-02-25

Classes: 365/145 ; 365/203

Field of search: 365/145,203,129,189.01

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